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Proceedings Paper

E-beam direct write (EBDW) as complementary lithography
Author(s): David Lam; Dave Liu; Ted Prescop
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Paper Abstract

193nm Optical lithography has powered the industry's growth for the last 10 years and multiple patterning is poised to extend 193nm even further. There is a growing trend in Logic design for manufacturing, with high-volume manufacturing (HVM) firms adopting a layout style using unidirectional single-pitch straight lines in poly and metal layers. These layouts lend themselves to a complementary lithography approach. First, unidirectional lines are patterned with Optical lithography. Second, these lines are "cut" to form the desired layout. In this paper, we present EBDW as a complement to optical lithography for line-cutting. We show how e-beam multiple-column architecture, optimized for line-cutting, is the best for patterning critical layers at advanced nodes as Complementary Lithography.

Paper Details

Date Published: 29 September 2010
PDF: 6 pages
Proc. SPIE 7823, Photomask Technology 2010, 78231C (29 September 2010); doi: 10.1117/12.868485
Show Author Affiliations
David Lam, Multibeam Corp. (United States)
Dave Liu, Multibeam Corp. (United States)
Ted Prescop, Multibeam Corp. (United States)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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