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Proceedings Paper

The optical CD metrology for EUV mask
Author(s): Jin-Back Park; Kyoung-Yoon Bang; Dong-Gun Lee; Hae-Young Jeong; Seung-Soo Kim; Han-Ku Cho
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Paper Abstract

The most important factor in extreme ultra violet (EUV) mask process is thickness variations which caused by resist dark loss, absorber etching and capping layer durability of cleaning chemical at each layer. For example if multilayer (M/L) is damaged due to 2.5nm capping layer loss after cleaning, it means it is impossible to get sufficient reflectance to make proper EUV mask.

Paper Details

Date Published: 27 May 2010
PDF: 9 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481X (27 May 2010); doi: 10.1117/12.868293
Show Author Affiliations
Jin-Back Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Kyoung-Yoon Bang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Gun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hae-Young Jeong, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seung-Soo Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII

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