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Proceedings Paper

Effect of EUV exposure upon surface residual chemicals on EUV mask surface
Author(s): Han-Shin Lee; Jaehyuck Choi; DonGun Lee; Hyungho Ko; SeongSu Kim; Chan-Uk Jeon; HanKu Cho
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Paper Abstract

Photo-induced defect for optic mask mainly depends on the surface residual ions coming from cleaning process, pellicle outgassing, or storage environments. Similar defect for EUV mask triggered by accumulated photon energy during photolithography process has drawn interest recently but this defect is somewhat different from normal photo-induced defect for optic mask. The photo-induced defect for EUV mask is known to be created by the chemical deposition of Carbon atoms originating from cracking of hydrocarbons by EUV light and secondary electrons on capping layer. It is very likely that Carbon contamination would be dominant under normal EUV exposure condition. On the other hand, it is expected that another kind of photo-induced defects would rise to surface under controlled environment where Carbon contamination growth is severely suppressed. We may have to understand the behavior of surface residual ions under EUV light in order to cope with another probable EUV photo-induced defect. In this paper, we will investigate whether surface ions remaining after cleaning process like sulfate or ammonium ions would create printable defects or decompose into evaporable species under EUV light. In case they create certain defects on mask surface, their effect on EUV reflectivity and absorber pattern CD variation will be also examined. Finally, improved cleaning process to impede photo-induced defect creation on EUV mask will be introduced.

Paper Details

Date Published: 26 May 2010
PDF: 9 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774804 (26 May 2010); doi: 10.1117/12.868292
Show Author Affiliations
Han-Shin Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jaehyuck Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
DonGun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyungho Ko, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
SeongSu Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
HanKu Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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