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Proceedings Paper

Evaluation of novel EUV mask inspection technologies
Author(s): Shmoolik Mangan; Aya Kantor; Nir Shoshani; Asaf Jaffe; Dror Kasimov; Vladislav Kudriashov; Ran Brikman; Lior Shoval; Anoop Sreenath
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Paper Abstract

EUV lithography is regarded as the leading technology solution for the post-ArF era. Significant progress was made in recent years in closing the gaps related to scanner technology. This progress rendered EUV mask defectivity and related infrastructure as the primary risk for EUV lithography. The smallness of mask features, the novel defectivity mechanisms associated with the multilayer reflecting coating, and the stringent constraints on both multilayer and pattern imposed by the EUV wavelength - present a major challenge to current inspection technology, which constitutes a predominant gap to EUVL production-worthiness. Here we present results from an evaluation of a DUV mask inspection system and e-beam mask inspection technology on EUV masks. On this 193nm DUV system, we studied sensitivity and contrast enhancements by resolution enhancement techniques. We studied both pattern and blank inspection. Next, we studied image formation and performance of e-beam mask inspection technology for patterned mask defects. We discuss the advantages and roadmap of DUV and EBI mask inspection solutions for blank and patterned masks.

Paper Details

Date Published: 28 May 2010
PDF: 14 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774822 (28 May 2010); doi: 10.1117/12.868140
Show Author Affiliations
Shmoolik Mangan, Applied Materials (Israel)
Aya Kantor, Applied Materials (Israel)
Nir Shoshani, Applied Materials (Israel)
Asaf Jaffe, Applied Materials (Israel)
Dror Kasimov, Applied Materials (Israel)
Vladislav Kudriashov, Applied Materials (Israel)
Ran Brikman, Applied Materials (Israel)
Lior Shoval, Applied Materials (Israel)
Anoop Sreenath, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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