Share Email Print
cover

Proceedings Paper

A back-illuminated heterojunctions ultraviolet photodetector based on ZnO film
Author(s): Xiandong Jiang; Dawei Li; Wenjun Yang; Jiming Wang; Xu Lin; Ziqiang Huang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this paper, we present the investigation of a back-illuminated heterojunctions ultraviolet detector, which were fabricated by depositing Ag-doped ZnO based (ZnO-TiO2) thin film on transparent conductive layer of ITO coated quartz substrate though the reactive radio-frequency (RF) magnetron sputtering at higher oxygen pressure. The p-n junction characteristic is confirmed by current-voltage (I-V) measurements. The turn-on voltage was 6 V, with a low leakage current under reverse bias (-5 V), corresponding values was just 0.2 nA . It is clearly showed the rectifying characteristics of typical p-n junction's rectifier behaviors. The structural, component and UV (365 nm, 1400 μW/cm2) photoresponse properties were explored by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), X-ray energy dispersive spectrometer (EDS) and Tektronix oscilloscope. The results showed that: Ag in substitution form in the ZnO lattice, Ag doping concentration is low, the sample is highly c-axis preferred orientation, With the increase in doped Ag volume, ZnO film of 002 peaks no longer appear. The surface of the Ag doped ZnO based film exhibits a smooth surface and very dense structure, no visible pores and defects over the film were observed.The ultraviolet response time measurements showed rise and fall time are several seconds Level.

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584M (22 October 2010); doi: 10.1117/12.867893
Show Author Affiliations
Xiandong Jiang, Univ. of Electronic Science and Technology of China (China)
Dawei Li, Univ. of Electronic Science and Technology of China (China)
Wenjun Yang, Univ. of Electronic Science and Technology of China (China)
Jiming Wang, Univ. of Electronic Science and Technology of China (China)
Xu Lin, Univ. of Electronic Science and Technology of China (China)
Ziqiang Huang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

© SPIE. Terms of Use
Back to Top