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Proceedings Paper

Influences of process parameters of low frequency PECVD technology on intrinsic stress of silicon nitride thin film
Author(s): Weizhi Li; Zhe Kang; Yun Ye; Yadong Jiang
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Paper Abstract

Silicon nitride (SiNx) thin films were deposited by low frequency (LF) plasma enhanced chemical vapor deposition (PECVD) technology. By systematic variation of the process parameters, e.g. reactive gas flow rate, LF power, chamber gas pressure and substrate temperature. Influences of above parameters on the intrinsic stress of SiNx films were studied and analyzed by combining with the measured refractive index (RI), density, infrared spectra results of deposited SiNx films. The results showed that intrinsic stress of SiNx film was roughly proportional to film density, which was inversely proportional to hydrogen content in the SiNx film. Substrate temperature during deposition was the most important factor affecting hydrogen content in deposited film and, accordingly, the density and intrinsic stress of SiNx film.

Paper Details

Date Published: 22 October 2010
PDF: 7 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765824 (22 October 2010); doi: 10.1117/12.867778
Show Author Affiliations
Weizhi Li, Univ. of Electronic Science and Technology of China (China)
Zhe Kang, Univ. of Electronic Science and Technology of China (China)
Yun Ye, Fuzhou Univ. (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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