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Proceedings Paper

Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance
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Paper Abstract

When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. Thin absorber mask with light-shield border of etched multilayer adds to the process flexibility of a mask with high CD accuracy. In this paper, we demonstrate the lithographic performance of a thin absorber mask with light-shield border of etched multilayer using a full-field exposure tool (EUV1) operating under the current working condition of EUV source.

Paper Details

Date Published: 27 May 2010
PDF: 10 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774805 (27 May 2010); doi: 10.1117/12.867774
Show Author Affiliations
Takashi Kamo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hajime Aoyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yukiyasu Arisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuo Tawarayama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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