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Proceedings Paper

Study and improvement approach to 193-nm radiation damage of attenuated phase-shift mask
Author(s): Yoshifumi Sakamoto; Tomohito Hirose; Hitomi Tsukuda; Taichi Yamazaki; Yosuke Kojima; Hayato Ida; Takashi Haraguchi; Tsuyoshi Tanaka; Ryuji Koitabashi; Yukio Inazuki; Hiroki Yoshikawa
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Paper Abstract

The exposure tools have been advanced for finer patterns and higher throughput. However, it causes the increase of accumulation of exposure dose on mask, which induces the mask CD growth. This issue has been reported as the radiation damage and brought the low yield of device chips [1, 2, 3]. As the solution, the radiation damage can be reduced by the ultra extreme dry air in exposure tool [4]. It is difficult to adopt dry air to all exposure tool due to cost. In this work, we tried to solve the radiation damage from photomask making approach. The attenuated phase-shift mask (att. PSM) was chosen for this evaluation because its damage is severest. The test plates of att. PSM were exposed by ArF laser, and the amount of CD degradation and the composition change in damage area were investigated. By the analyses of TEM and EDX, it was confirmed that the root cause of radiation damage is oxidation of MoSi film. Therefore, the approaches from mask process and material were tried to prevent MoSi film from oxidation. As a result, the approach from mask material, especially modification of MoSi film is effective. And the characteristics of new MoSi film, such as CD performances, cross section, and cleaning durability, were compared with conventional att. PSM. These results show the characteristics of two masks are equivalent. Att. PSM with new MoSi film is promising solution to improve radiation damage.

Paper Details

Date Published: 24 September 2010
PDF: 12 pages
Proc. SPIE 7823, Photomask Technology 2010, 782324 (24 September 2010); doi: 10.1117/12.867710
Show Author Affiliations
Yoshifumi Sakamoto, Toppan Printing Co., Ltd. (Japan)
Tomohito Hirose, Toppan Printing Co., Ltd. (Japan)
Hitomi Tsukuda, Toppan Printing Co., Ltd. (Japan)
Taichi Yamazaki, Toppan Printing Co., Ltd. (Japan)
Yosuke Kojima, Toppan Printing Co., Ltd. (Japan)
Hayato Ida, Toppan Printing Co., Ltd. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Tsuyoshi Tanaka, Toppan Printing Co., Ltd. (Japan)
Ryuji Koitabashi, Shin-Etsu Chemical Co., Ltd. (Japan)
Yukio Inazuki, Shin-Etsu Chemical Co., Ltd. (Japan)
Hiroki Yoshikawa, Shin-Etsu Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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