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Proceedings Paper

Antireflective gradient index silica films for high power laser applications
Author(s): Lianghong Yan; Haibing Lv; Shaobo He; Xiaodong Yuan; Wanguo Zheng
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Paper Abstract

Antireflective films are widely applied in optical areas due to their ability of reducing reflection and increasing transmittance of light. A process of depositing antireflective gradient index silica films on fused silica and other optical material surfaces is reported. The films possess the properties of wide-spectrum antireflective transmittance and high laser induced damage threshold. To prepare the film, there is first prepared a silica sol by a controlled proportion of water to alkoxide and a controlled concentration of alkoxide to solution, along with a small amount of catalyst. The prepared sol is dipping deposited onto vitreous substrate, resulting in silica layers with thickness of ~300nm and pore diameter of ~8nm. The silica layer is then etched in order to modify the pores in a graded fashion, forming antireflective gradient index silica films. The films display better than 99.0% transmittance through the entire 1053-350 nm band and laser induced damage threshold as high as 12 J/cm2 at 351 nm, meeting a significant technological requirement.

Paper Details

Date Published: 6 October 2010
PDF: 8 pages
Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 765519 (6 October 2010); doi: 10.1117/12.867596
Show Author Affiliations
Lianghong Yan, China Academy of Engineering Physics (China)
Haibing Lv, China Academy of Engineering Physics (China)
Shaobo He, China Academy of Engineering Physics (China)
Xiaodong Yuan, China Academy of Engineering Physics (China)
Wanguo Zheng, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 7655:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Li Yang; Yoshiharu Namba; David D. Walker; Shengyi Li, Editor(s)

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