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Proceedings Paper

Phase locked harmonic localization and enhancement in an absorbing semiconductor cavity
Author(s): V. Roppo; C. Cojocaru; G. D'Aguanno; F. Raineri; J. Trull; Y. Halioua; R. Vilaseca; R. Raj; M. Scalora
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Paper Abstract

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and UV ranges.

Paper Details

Date Published: 17 May 2010
PDF: 7 pages
Proc. SPIE 7469, ROMOPTO 2009: Ninth Conference on Optics: Micro- to Nanophotonics II, 74690F (17 May 2010); doi: 10.1117/12.867543
Show Author Affiliations
V. Roppo, Univ. Politècnica de Catalunya (Spain)
U.S. Army Research, Development and Engineering Command (United States)
C. Cojocaru, Univ. Politècnica de Catalunya (Spain)
G. D'Aguanno, U.S. Army Research, Development and Engineering Command (United States)
AEgis Technologies Inc. (United States)
F. Raineri, Lab. de Photonique et de Nanostructures, CNRS (France)
Univ. Paris-Diderot (France)
J. Trull, Univ. Politècnica de Catalunya (Spain)
Y. Halioua, Lab de Photonique et de Nanostructures, CNRS (France)
Univ. Gent-IMEC (Belgium)
R. Vilaseca, Univ. Politècnica de Catalunya (Spain)
R. Raj, Lab de Photonique et de Nanostructures, CNRS (France)
M. Scalora, U.S. Army Research, Development and Engineering Command (United States)


Published in SPIE Proceedings Vol. 7469:
ROMOPTO 2009: Ninth Conference on Optics: Micro- to Nanophotonics II
Valentin I. Vlad, Editor(s)

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