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Proceedings Paper

Acceptor thickness effect of exciplex and electroplex emission at heterojunction interface in organic light-emitting diodes
Author(s): Wei Zhang; Junsheng Yu; Kai Yuan; Yadong Jiang; Qing Zhang; Kangli Cao
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Paper Abstract

Organic light-emitting diodes (OLEDs) consisted of a novel fluorene derivative of 5,6-bis(9,9-dihexyl-9H-fluoren-2-yl)- 2,3-diisocyano-2,3-dihydropyrazine (BDHFLCNPy) and a hole transporting material of N,N'-Di-[(1-naphthalenyl)- N,N'-diphenyl](1,1'-biphenyl)-4,4'-diamine (NPB) were fabricated, and electroluminescence (EL) spectrum of devices were investigated. It was found that light emission around 650 nm observed in devices came from exciplex generated at heterojunction interface by NPB molecules worked as electron donor and BDHFLCNPy molecules worked as electron acceptor. Moreover, a shoulder peak around 500 nm ascribed to BDHFLCNPy exciton was observed. To systemically study the effect of heterojunction structure in exciplex formation, OLEDs with different thickness of acceptor were fabricated. The results illustrated that a shoulder peak around 600 nm occurred in EL when acceptor thickness increases, and BDHFLCNPy exciton emitting strength is relatively altered. The emission band around 600 nm is due to electroplex. The L-V-J properties of OLEDs show that device with the thinnest acceptor layer has the highest luminance and current density. On the contrary, OLEDs with thicker acceptor layer have higher luminance efficiency. The different recombination mechanism of exciton, exciplex and electroplex in heterojunction were studied. Furthermore, the acceptor thickness effect of exciplex and electroplex generating mechanism and energy transferring mechanism between them was also discussed.

Paper Details

Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76583V (22 October 2010); doi: 10.1117/12.867127
Show Author Affiliations
Wei Zhang, Univ. of Electronic Science and Technology of China (China)
Junsheng Yu, Univ. of Electronic Science and Technology of China (China)
Kai Yuan, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Qing Zhang, Shanghai Jiaotong Univ. (China)
Kangli Cao, Shanghai Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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