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Proceedings Paper

Plasma monitoring of chrome dry etching for mask making
Author(s): Sung-Won Kwon; Dong-Chan Kim; Dong-Seok Nam; Sang-Gyun Woo; Han-Ku Cho
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Paper Abstract

As a photomask feature size shrinks, chrome (Cr) dry etching process is one of the most critical steps which define the performance of critical dimensions (CDs). In consequence, plasma conditions should be maintained stable in a etch chamber. In this work, advanced methodologies using plasma monitoring tools are introduced; Optical Emission Spectroscopy (OES) and the Self-Excited Electron Resonance Spectroscopy (SEERS). After an etch chamber was monitored with these tools, plasma conditions could be categorized with respect to the three parameters; the spectra, the electron collision rate, and the electron density distributions. Finally, it is possible to predict the CD performance of the chamber by checking the specific plasma parameters.

Paper Details

Date Published: 24 September 2010
PDF: 13 pages
Proc. SPIE 7823, Photomask Technology 2010, 78230F (24 September 2010); doi: 10.1117/12.866828
Show Author Affiliations
Sung-Won Kwon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Chan Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong-Seok Nam, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Gyun Woo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han-Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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