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Proceedings Paper

Photoluminescence of Mn+ doped GaAs
Author(s): Huiying Zhou; Shengchun Qu; Shuzhi Liao; Fasheng Zhang; Junpeng Liu; Zhanguo Wang
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Paper Abstract

Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated, respectively. Mn-doped GaAs structure materials were prepared by Mn+ ion implantation at room temperature into GaAs. The implanted samples were subsequently annealed at various temperatures under N2 atmosphere to recrystallize the samples and remove implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV (1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This structure material could have myriad applications, including information storage, magnet-optical properties and energy level engineering.

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765846 (22 October 2010); doi: 10.1117/12.866642
Show Author Affiliations
Huiying Zhou, Central South Univ. of Forestry and Technology (China)
Institute of Semiconductors (China)
Hunan Normal Univ. (China)
Shengchun Qu, Institute of Semiconductors (China)
Shuzhi Liao, Hunan Normal Univ. (China)
Fasheng Zhang, Central South Univ. of Forestry and Technology (China)
Junpeng Liu, Institute of Semiconductors (China)
Zhanguo Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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