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Proceedings Paper

Influence of baffle on improving the thickness uniformity of thin film deposited by magnetron sputtering system
Author(s): He Yu; Yadong Jiang; Tao Wang; Zhiming Wu; Jing Jiang; Hongjun Jing
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Paper Abstract

The way of improving the thickness uniformity of the thin film deposited by magnetron sputtering system is presented in this paper. A simple model for the magnetron sputtering system with a baffle between cathode target and substrate is described. Based on this model, it is possible to predict the relative deviation of film thickness with this baffle-model by taking the shape and size of baffle into the consideration. The purpose of this article is to explain how different baffle parameters affect the uniformity of thin film using the method of finite element with rectangle target in this magnetron system. It is found that there may exist optimum baffle conditions where the relative deviation of thin film thickness is less than 3 % with a diameter of Φ 150 mm substrate.

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581N (22 October 2010); doi: 10.1117/12.866615
Show Author Affiliations
He Yu, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)
Tao Wang, Univ. of Electronic Science and Technology of China (China)
Zhiming Wu, Univ. of Electronic Science and Technology of China (China)
Jing Jiang, Univ. of Electronic Science and Technology of China (China)
Hongjun Jing, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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