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Proceedings Paper

Contact mask LER impact on lithographic performance
Author(s): Tatsuya Nagatomo; Mitsuharu Yamana; Katsuhisa Morinaga; Masaru Higuchi; Shunsuke Sato; Tsuyoshi Tanaka
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Paper Abstract

A requirement for CD control on wafer is increasing with shrinking design rule[1]. This is especially true for dense contacts because of higher MEEF. It is considered that contact mask LER impact on lithographic performance is comparatively large. Nevertheless, a relationship between contact mask LER and wafer performance has not been evaluated in recent years. Therefore we studied contact mask roughness impact on wafer in order to determine specs for improvement of mask quality. We assumed the thin MoSi binary mask which was called Opaque MoSi On Glass (OMOG). The programmed roughness patterns data for 28 nm nodes was made. The frequency and depth of roughness was changed. In addition, we also drew bump patterns. A lithography simulator was used to investigate which kind of mask roughness impacted significantly on wafer. We compared the difference between wafer experiment and simulation. Finally a relationship between contact mask roughness and lithographic performance was obtained.

Paper Details

Date Published: 26 May 2010
PDF: 10 pages
Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481S (26 May 2010); doi: 10.1117/12.866397
Show Author Affiliations
Tatsuya Nagatomo, Toppan Printing Co., Ltd. (Japan)
Mitsuharu Yamana, Toppan Printing Co., Ltd. (Japan)
Katsuhisa Morinaga, Toppan Printing Co., Ltd. (Japan)
Masaru Higuchi, Toppan Printing Co., Ltd. (Japan)
Shunsuke Sato, Toppan Printing Co., Ltd. (Japan)
Tsuyoshi Tanaka, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7748:
Photomask and Next-Generation Lithography Mask Technology XVII
Kunihiro Hosono, Editor(s)

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