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Proceedings Paper

Feasibility study of EUV patterned mask inspection for the 22nm node
Author(s): Dana Bernstein; Eun Young Park; Asaf Jaffe; Nir Shoshani; Ziv Parizat; Shmoolik Mangan; Sang Hoon Han; Dong Hoon Chung
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Paper Abstract

Extreme Ultra Violet Lithography (EUVL) is a major patterning solution candidate being considered for the ITRS (International Technology Roadmap for Semiconductors) advanced technology nodes commencing with the 22nm Half Pitch (HP) nodes. Achieving defect free EUVL masks is a critical issue in the wafer manufacturing process and thus the importance for mask inspection technology to be ready to support pilot line development. EUV mask inspection presents additional challenges with smaller line width, multilayer defects and no pellicle to protect the mask. In addition, Line Edge Roughness on the mask can limit the detection sensitivity. Configurable inspection illumination conditions were considered to enhance the contrast of the mask image and improve the detection sensitivity. Here we present experimental results of evaluating the defects detecting capability on several EUVL masks of different technology nodes. EUVL mask inspections were done using Material's Aera3TM DUV (193nm) reflected illumination optical inspection system employing configurable inspection illumination conditions and magnifications.

Paper Details

Date Published: 29 October 2010
PDF: 10 pages
Proc. SPIE 7823, Photomask Technology 2010, 782335 (29 October 2010); doi: 10.1117/12.866155
Show Author Affiliations
Dana Bernstein, Applied Materials (Israel)
Eun Young Park, Applied Materials (Israel)
Asaf Jaffe, Applied Materials (Israel)
Nir Shoshani, Applied Materials (Israel)
Ziv Parizat, Applied Materials (Israel)
Shmoolik Mangan, Applied Materials (Israel)
Sang Hoon Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Dong Hoon Chung, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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