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Proceedings Paper

Electroluminescence performance of organic light-emitting diode with molybdenum trioxide inside hole transport layer
Author(s): Ye Zou; Zhenbo Deng; Zhaoyue Lü; Zheng Chen; Yuehong Yin; Hailiang Du; Yongsheng Wang
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Paper Abstract

A new structure of organic light-emitting diode (OLED) was fabricated by inserting a thin molybdenum trioxide (MoO3) layer into hole transport layer (HTL) N,N'-diphenyl-N,N'-bis(1-napthyl-phenyl)-1,1'-biphenyl-4,4'-diamine (NPB). The device structure is ITO/NPB(10 nm)/MoO3(3 nm)/NPB (30 nm)/tris-(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/LiF(0.5 nm)/Al. The control device is set without MoO3 interlayer. The driving voltage at 100 cd/m2 is only 4.87 V corresponding to the device with MoO3 interlayer, which is much lower than the control device of 6.40 V. The novel device also shows higher power efficiency compared to the control device. The improvement of device performance is attributed to the Charge Transfer complex (CT complex), generated at the NPB/MoO3/NPB interfaces, contributing here as hole transfer enhancer. Our finding additionally demonstrates the practical applicability of MoO3 as a buffer layer in OLEDs.

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580S (22 October 2010); doi: 10.1117/12.866038
Show Author Affiliations
Ye Zou, Beijing Jiaotong Univ. (China)
Zhenbo Deng, Beijing Jiaotong Univ. (China)
Zhaoyue Lü, Beijing Jiaotong Univ. (China)
Zheng Chen, Beijing Jiaotong Univ. (China)
Yuehong Yin, Beijing Jiaotong Univ. (China)
Hailiang Du, Beijing Jiaotong Univ. (China)
Yongsheng Wang, Beijing Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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