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Proceedings Paper

Influence of doping I2 into MEH-PPV on carrier transporting capability and electroluminescence properties
Author(s): Zhiming Cheng; Fujun Zhang
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Paper Abstract

The current-voltage characteristics and electroluminescence (EL) spectra were studied with different I2 doping concentration in MEH-PPV based on single layer and double layer organic light emitting diodes (OLEDs). For the single layer devices, EL intensity and current was increased with the doping concentration under the same driving voltage. For the double layer devices, the charge carrier recombination zone was controlled by the different I2 doping concentration compared to these devices without doping. The variation of EL spectra was discussed from the improvement of hole mobility in MEH-PPV layer induced by I2 doping into it.

Paper Details

Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584H (22 October 2010); doi: 10.1117/12.865953
Show Author Affiliations
Zhiming Cheng, Beijing Jiaotong Univ. (China)
Fujun Zhang, Beijing Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology

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