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Proceedings Paper

Investigation of bright spatial solitons in SBN: 75 photorefractive crystal
Author(s): Qinglin Guo; Guiying Deng; Baolai Liang; Panlai Li; Yan Li; Xu Li
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Paper Abstract

This work studied the formation of spatial solitons in a SBN: 75 photorefractive crystal by 532 nm continuous-wave laser beam from a single frequency solid laser. It was found that the behaviors of the spatial solitons varied with background light. While white light and 632 nm red light are used as background, the solitons perform like first-order light soliton. The compressed-amplitude, in measured with laser beam's size before and after passing the crystal, is proportional to the applied voltage of a dc electric field, i.e., they are quasi-steady-state solitons formed in a time window. However, as the background is changed to an incoherent 532 nm light output from the same laser, the solitons vary periodically and the compressed-amplitude is not proportional to the voltage of applied dc electric field any more. In this case, solitons form instantaneously at applied field of 900 V/cm and hold the shape for 7 seconds which is less than the one with white or red light as background, and then break slowly. We tried to present reasonable explanation for above observation.

Paper Details

Date Published: 22 October 2010
PDF: 7 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580X (22 October 2010); doi: 10.1117/12.865947
Show Author Affiliations
Qinglin Guo, Hebei Univ. (China)
Guiying Deng, Hebei Univ. (China)
Baolai Liang, Hebei Univ. (China)
Panlai Li, Hebei Univ. (China)
Yan Li, Hebei Univ. (China)
Xu Li, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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