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Proceedings Paper

Infrared activity of crystalline silicon and amorphous silicon
Author(s): Shuang Liu; Wei Chen; Jianing Zhang; Wan Zhou; Pu Zeng
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Paper Abstract

The thermo-resistance effect in silicon has been exploited for the fabrication of uncooled infrared detectors. In this paper, based on the Schrodinger equation of material radiation system and the micro-structure of silicon, the infrared absorption theory of silicon is analyzed. The results show that the infrared activity of amorphous silicon is more activate than crystalline silicon because of the fault and long range disorder, and using the impurity B, Li, and H, the infrared activity of silicon also will be activated.

Paper Details

Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765831 (22 October 2010); doi: 10.1117/12.865943
Show Author Affiliations
Shuang Liu, Univ. of Electronic Science and Technology of China (China)
Wei Chen, Univ. of Electronic Science and Technology of China (China)
Jianing Zhang, Univ. of Electronic Science and Technology of China (China)
Wan Zhou, Univ. of Electronic Science and Technology of China (China)
Pu Zeng, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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