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Proceedings Paper

Luminescent properties of BaAl2Si2O8:Eu2+, Mn2+ phosphor for white LED
Author(s): Changyu Shen; Ke Li
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Paper Abstract

BaAl2Si2O8:xEu2+, yMn2+ was prepared by high-temperature solid state reaction and X-ray powder diffraction analysis confirmed the formation of it. It was found experimentally that, its emission peaks situated at 420 nm and 570 nm respectively under excitation of 380 nm irradiation. The emission peaks at 420 nm originate from the transition 5d to 4f of Eu2+ ions that occupy the Ba2+ sites in the crystal of BaAl2Si2O8, while the 580nm emission is attributed to the energy transfer from Eu2+ ions to Mn2+ ions. The white light can be obtained by combining the 380 nm chip with the phosphor. When the concentrations of the Eu2+ ions and Mn2+ ions were 0.05 mol and 0.35 mol respectively, the sample presented intense white emitting. The near-ultraviolet InGaN-based BaAl2Si2O8:0.05Eu2+, 0.35Mn2+ LED achieves good color rendering of 85 with the CIE coordinate of (0.3183, 0.3036).

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581J (22 October 2010); doi: 10.1117/12.865931
Show Author Affiliations
Changyu Shen, China Jiliang Univ. (China)
Ke Li, China Jiliang Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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