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Proceedings Paper

Fabrication of black silicon materials by wet etching and characterization
Author(s): Zhengyu Guo; Zhiming Wu; Anyuan Zhang; Jing Jiang; Guodong Zhao; Yadong Jiang
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Paper Abstract

In this paper we use Si3N4 membrane acting as mask in fabrication of black silicon by wet etching technique, and the sample have nearly 90% absorptance at wavelength from 250 nm to 1000 nm. The experiments result shows that Si3N4 membrane as mask wet etching technique for fabrication of black silicon is feasibility, and has much more advantages compared to fabrication of black silicon by using femtosecond laser, RIE and hydrothermal etching. It provides a proper and economical method for fabrication of black silicon visible and near-infrared optoelectronic devices.

Paper Details

Date Published: 22 October 2010
PDF: 7 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584S (22 October 2010); doi: 10.1117/12.865825
Show Author Affiliations
Zhengyu Guo, Univ. of Electronic Science and Technology of China (China)
Zhiming Wu, Univ. of Electronic Science and Technology of China (China)
Anyuan Zhang, Univ. of Electronic Science and Technology of China (China)
Jing Jiang, Univ. of Electronic Science and Technology of China (China)
Guodong Zhao, Univ. of Electronic Science and Technology of China (China)
Yadong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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