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Proceedings Paper

Analysis of properties of ZnCoO bulks by solid state reaction
Author(s): Xueqiong Su; Li Wang; Jiangbo Chen; Xiaojing Wan; Le Kong
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Paper Abstract

Zn0.9Co0.1O bulks were prepared by solid state reaction at various fritting temperatures in order to investigate the structural and optical properties of the bulks. The valence electron and doping concentration in bulk was measured by Xray photoelectron spectroscopy (XPS) instrument. Some basic properties of the bulk material in powder were examined to enhance the comprehension of magnetism in these semiconductors. The corresponding magnetic properties were evaluated by field-cooling and zero-field-cooling magnetization measurements, while the optical properties were tested by Fourier transformed infrared spectrum (FTIR). It is indcated that Co ions are well inserted in the ZnO structure and surrounded by four oxygen. It means that a series of Co have substituted Zn and the sample all the same maintains original wurtzite structure in lattice with a sintered temperature of 1200 °C, then it leads to chemical bond formation of Co-O. Furthermore, the fritting temperature do not play a crucial role in the determination of Co content.

Paper Details

Date Published: 22 October 2010
PDF: 5 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765829 (22 October 2010); doi: 10.1117/12.865808
Show Author Affiliations
Xueqiong Su, Beijing Univ. of Technology (China)
Li Wang, Beijing Univ. of Technology (China)
Jiangbo Chen, Beijing Univ. of Technology (China)
Xiaojing Wan, Beijing Univ. of Technology (China)
Le Kong, Beijing Univ. of Technology (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)

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