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Proceedings Paper

Large blue shift of the absorption edge in modified potential InGaAs/InAlAs coupled quantum wells
Author(s): Zhixin Xu; Changrong Wang; Zhefeng Yuan; Wei Qi
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Paper Abstract

We designed and experimentally reported modified potential InGaAs/InAlAs coupled quantum wells. In this structure, a large blue shift of the absorption edge of more than 35 meV is obtained at a reverse bias of -4 V. This predicts that a large negative electrorefractive index change can be achieved at longer wavelength region of the absorption edge.

Paper Details

Date Published: 18 November 2010
PDF: 5 pages
Proc. SPIE 7847, Optoelectronic Devices and Integration III, 78471H (18 November 2010); doi: 10.1117/12.865805
Show Author Affiliations
Zhixin Xu, Zhejiang Univ. of Science and Technology (China)
Changrong Wang, Zhejiang Univ. of Science and Technology (China)
Zhefeng Yuan, Zhejiang Univ. of Science and Technology (China)
Wei Qi, Zhejiang Univ. City College (China)


Published in SPIE Proceedings Vol. 7847:
Optoelectronic Devices and Integration III
Xuping Zhang; Hai Ming; Alan Xiaolong Wang, Editor(s)

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