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Proceedings Paper

Cubic III-nitrides: potential photonic materials
Author(s): K. Onabe; S. Sanorpim; H. Kato; M. Kakuda; T. Nakamura; K. Nakamura; S. Kuboya; R. Katayama
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Paper Abstract

The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c- GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE. This series of study has been much focused on the cubic-phase purity as dependent on the respective growth conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than 95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.

Paper Details

Date Published: 24 January 2011
PDF: 8 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794517 (24 January 2011); doi: 10.1117/12.865768
Show Author Affiliations
K. Onabe, The Univ. of Tokyo (Japan)
S. Sanorpim, Chulalongkorn Univ. (Thailand)
H. Kato, The Univ. of Tokyo (Japan)
M. Kakuda, The Univ. of Tokyo (Japan)
T. Nakamura, The Univ. of Tokyo (Japan)
K. Nakamura, The Univ. of Tokyo (Japan)
S. Kuboya, The Univ. of Tokyo (Japan)
R. Katayama, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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