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Proceedings Paper

Optical properties of narrow-bandgap dilute nitrides
Author(s): S. Kuboya; M. Kuroda; Q. T. Thieu; R. Katayama; K. Onabe
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Paper Abstract

In this work, the detailed MOVPE growth properties of InAsN films with N contents up to 2.54% and the photoluminescence properties in relation with the carrier concentrations were investigated. For the MOVPE growth, tertiary-butylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy) were used as the group-V precursors. The efficient growth conditions for the InAsN films with higher N contents are a higher DMHy/V ratio and a lower As/In ratio. The photoluminescence emission from the post-annealed InAsN films exhibits a blue-shift with increasing the N content, which is contrary to the expected bandgap bowing. The same blue-shift behavior was observed in InAsN films grown on SI-GaAs(001) substrate by RF-MBE. As a result of temperature dependent photoluminescence measurements under various excitation powers, it was found that the blue-shift of the PL-peak energy of the InAsN films was attributed to the band-filling effect due to the degenerate electrons induced by the N incorporation.

Paper Details

Date Published: 24 January 2011
PDF: 7 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794518 (24 January 2011); doi: 10.1117/12.865767
Show Author Affiliations
S. Kuboya, The Univ. of Tokyo (Japan)
M. Kuroda, The Univ. of Tokyo (Japan)
Q. T. Thieu, The Univ. of Tokyo (Japan)
R. Katayama, The Univ. of Tokyo (Japan)
K. Onabe, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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