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Proceedings Paper

Study of charge transport mechanisms in ZnO-ZnTe nanojunctions
Author(s): Jun Xu; Sang Hyun Lee; Zane W. Bell; Barton Smith; X.-G. Zhang; Tong Ju; An-Jen Chen; Zhengwei Pan
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Paper Abstract

Improved carrier transport is crucial for enhancing the performance of semiconductor devices such as radiation detectors. Conventionally, semiconductor devices employ planar p-n junctions in which carrier loss occurs mostly in the p-type and n-type diffusion regions. In a nanoscale three-dimensional (3-D) junction, the carriers can be efficiently collected cross the nanostructure by electric field distribution without trapping in the p-n regions. In addition, a nanocone junction should further improve carrier transport properties because this structure can be tailored to be completely depleted. In this work, we studied carrier transport mechanisms in nanojunctions made of vertically aligned ZnO nanostructures and ZnTe matrix using theoretical and experimental methods.

Paper Details

Date Published: 4 September 2010
PDF: 7 pages
Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050Z (4 September 2010); doi: 10.1117/12.865607
Show Author Affiliations
Jun Xu, Oak Ridge National Lab. (United States)
Sang Hyun Lee, Oak Ridge National Lab. (United States)
Zane W. Bell, Oak Ridge National Lab. (United States)
Barton Smith, Oak Ridge National Lab. (United States)
X.-G. Zhang, Oak Ridge National Lab. (United States)
Tong Ju, Oak Ridge National Lab. (United States)
An-Jen Chen, Univ. of Minnesota (United States)
Zhengwei Pan, The Univ. of Georgia (United States)


Published in SPIE Proceedings Vol. 7805:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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