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Proceedings Paper

Investigation of DBR used in HB-LED
Author(s): Zhi-Quan Li; Ya-Nan Wang; Xiao-Gang Wu; Yue Gu
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Paper Abstract

The high brightness InGaAlP light emitting diodes(LED) is a novel solid-state lighting in recent years. As the absorption of the red light by the GaAs substrates decreased external quantum efficiency, the development and application of LED are limited. If all the light incident to the substrate can be reflected, the influences of substrate absorption are radically improved. Therefore, a novel distributed Bragg reflector(DBR) is proposed. The defect layer whose crystal lattice constant matched with the substrate grows among the DBR to change the reflectivity spetrum by regulating the defect layer meterial and thickness. According to matrices-optic theoretics, analogically compute the reflectivity and transmission spectrum of Al0.5Ga0.5As/AlAs DBR in which has defect layer, corresponding to the wavelength is 610nm and period is 15. The experimental results show that the reflectivity is not less than 0.6 as the incident angle is greater than 45°. Hence, a novel method is obtained for enhancing the LED external quantum efficiency.

Paper Details

Date Published: 22 October 2010
PDF: 7 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581A (22 October 2010); doi: 10.1117/12.865511
Show Author Affiliations
Zhi-Quan Li, Yanshan Univ. (China)
Ya-Nan Wang, Yanshan Univ. (China)
Xiao-Gang Wu, Yanshan Univ. (China)
Yue Gu, Yanshan Univ. (China)


Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology

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