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Reliability studies of high operating temperature MCT photoconductor detectorsFormat | Member Price | Non-Member Price |
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Paper Abstract
This paper concerns HgCdTe (MCT) infrared photoconductor detectors with high operating temperature. The near room
temperature operation of detectors have advantages of light weight, less cost and convenient usage. Their performances
are modest and they suffer from reliable problems. These detectors face with stability of the package, chip bonding area
and passivation layers. It's important to evaluate and improve the reliability of such detectors. Defective detectors were
studied with SEM(Scanning electron microscope) and microscopy. Statistically significant differences were observed
between the influence of operating temperature and the influence of humidity. It was also found that humility has
statistically significant influence upon the stability of the chip bonding and passivation layers, and the amount of
humility isn't strongly correlated to the damage on the surface. Considering about the commonly found failures modes in
detectors, special test structures were designed to improve the reliability of detectors. An accelerated life test was also
implemented to estimate the lifetime of the high operating temperature MCT photoconductor detectors.
Paper Details
Date Published: 22 October 2010
PDF: 8 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765849 (22 October 2010); doi: 10.1117/12.865502
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
PDF: 8 pages
Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 765849 (22 October 2010); doi: 10.1117/12.865502
Show Author Affiliations
Wei Wang, Shanghai Institute of Technical Physics (China)
Jintong Xu, Shanghai Institute of Technical Physics (China)
Jintong Xu, Shanghai Institute of Technical Physics (China)
Yan Zhang, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Xiangyang Li, Shanghai Institute of Technical Physics (China)
Published in SPIE Proceedings Vol. 7658:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology
Yadong Jiang; Bernard Kippelen; Junsheng Yu, Editor(s)
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