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Proceedings Paper

Research on third-order susceptibility tensor of silicon at telecom wavelength
Author(s): Yu-Hong Zhang; Hang Liu; Zhan-Guo Chen; Gang Jia; Ce Ren
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Paper Abstract

In this paper, the electro-induced birefringence based on Kerr effect and Franz-Keldysh effect in bulk silicon crystal at 1.3μm wavelengths has been measured. By using Kerr effect, the third-order susceptibility tensor of bulk crystalline silicon has been calculated.The two independent tensor of silicon X (3) susceptibility can be obtained by calculation (3) 6.22 (1 2.2%) 10 -20 m2 V2 and Xxyxy(3) = and xxxx(3) 9.13 (1 ±2.2%) 10-20 m2 V 2 = m2/V2. The research can drive the silicon utility in the photo-electricity field.

Paper Details

Date Published: 12 October 2010
PDF: 5 pages
Proc. SPIE 7656, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 765673 (12 October 2010); doi: 10.1117/12.865458
Show Author Affiliations
Yu-Hong Zhang, Jilin Architectural and Civil Engineering Institute (China)
Hang Liu, Jilin Architectural and Civil Engineering Institute (China)
Zhan-Guo Chen, Jilin Univ. (China)
Gang Jia, Jilin Univ. (China)
Ce Ren, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 7656:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment

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