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Proceedings Paper

Research on exposure model for DMD-based digital gray-tone mask
Author(s): Ningning Luo; Yiqing Gao; Shuai He; Yufang Rao
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Paper Abstract

Based on DMD-lithography system, the mapping relation between gray scale and photoresist relief has been investigated. We obtain DMD reflectivity of different gray scale by experiment. Testing curve shows the light modulation of DMD is nonlinear from 0 to 255. However, the testing curve shows local linearization as well. The modulation of DMD is approximately linear from 40 to 130 and from 160 to 230. When designing the gray-scale mask, we should choose the gray scales in the same linear region to satisfy the requirement of multi-step relief. After being modulated by DMD, the reflection with mask information passes through the reduction projection system and images on the photoresist. After development, the photoresist relief can be formed. By comprehensively considering the influence of all parts on lithography, the exposure model is set up. We calculate the gray tones of 4-step and 8-step elements respectively according to the model. Experimental results show that the exposure model is reasonable and correct. The establishment of exposure model has reference value for the precise control on relief depth.

Paper Details

Date Published: 22 October 2010
PDF: 6 pages
Proc. SPIE 7657, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 765712 (22 October 2010); doi: 10.1117/12.865232
Show Author Affiliations
Ningning Luo, Nanjing Univ. of Aeronautics and Astronautics (China)
Nanchang HangKong Univ. (China)
Yiqing Gao, Nanchang HangKong Univ. (China)
Shuai He, Nanchang HangKong Univ. (China)
Yufang Rao, Nanchang HangKong Univ. (China)


Published in SPIE Proceedings Vol. 7657:
5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
Tianchun Ye; Sen Han; Masaomi Kameyama; Song Hu, Editor(s)

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