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Proceedings Paper

Substrate aware OPC rules for edge effect in block levels
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Paper Abstract

Implant level photolithography processes are becoming more challenging each node due to everdecreasing CD and resist edge placement requirements, and the technical challenge is exacerbated by the business need to develop and maintain low-cost processes. Optical Proximity Correction (OPC) using models created based on data from plain silicon substrate is not able to accommodate the various real device/design scenarios due to substrate pattern effects. In this paper, we show our systematic study on substrate effect (RX/STI) on implant level lithography CD printing. We also explain the CD variation mechanism and validate by simulation using well calibrated physical resist model. Based on the results, we propose an approach to generate substrate-aware OPC rules to correct for such substrate effects.

Paper Details

Date Published: 24 September 2010
PDF: 9 pages
Proc. SPIE 7823, Photomask Technology 2010, 78233U (24 September 2010); doi: 10.1117/12.865134
Show Author Affiliations
Dongbing Shao, IBM Corp. (United States)
Todd C. Bailey, IBM Corp. (United States)
Ian Stobert, IBM Corp. (United States)
Irene Popova, IBM Corp. (United States)
Chan Sam Chang, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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