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Proceedings Paper

Photorefractive and photoconductive properties of the organic materials doped with fullerenes, quantum dots, and nanotubes
Author(s): N. V. Kamanina; N. A. Shurpo; Yu. A. Zubtsova; A. V. Prokhorenkov; S. V. Serov; P. Ya. Vasilyev; V. I. Studeonov; F. Kajzar
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Paper Abstract

Effective correlation between photoconductive and photorefractive characteristics of fullerene-, quantum dots-, and nanotubes-doped organic thin films based on polyimide, pyridine, etc. have been studied. The increase of the charge carrier mobility has been established. The nonlinear refraction and cubic nonlinearity have been investigated at wavelength of 532 nm via four-wave mixing technique using Raman-Nath diffraction regime. The correlation between photoconductive and nonlinear optical parameters has been revealed. The nanostructured materials can be proposed for different area of nano- and microelectronic applications.

Paper Details

Date Published: 13 October 2010
PDF: 5 pages
Proc. SPIE 7838, Optics and Photonics for Counterterrorism and Crime Fighting VI and Optical Materials in Defence Systems Technology VII, 78381G (13 October 2010); doi: 10.1117/12.865030
Show Author Affiliations
N. V. Kamanina, S.I. Vavilov State Optical Institute (Russian Federation)
Saint Petersburg Electrotechnical Univ. (Russian Federation)
Univ. d'Angers (France)
N. A. Shurpo, S.I. Vavilov State Optical Institute (Russian Federation)
Yu. A. Zubtsova, S.I. Vavilov State Optical Institute (Russian Federation)
A. V. Prokhorenkov, Saint Petersburg Electrotechnical Univ. (Russian Federation)
S. V. Serov, S.I. Vavilov State Optical Institute (Russian Federation)
P. Ya. Vasilyev, S.I. Vavilov State Optical Institute (Russian Federation)
V. I. Studeonov, S.I. Vavilov State Optical Institute (Russian Federation)
F. Kajzar, Univ. d'Angers (France)


Published in SPIE Proceedings Vol. 7838:
Optics and Photonics for Counterterrorism and Crime Fighting VI and Optical Materials in Defence Systems Technology VII
Colin Lewis; Roberto Zamboni; François Kajzar; Doug Burgess; Emily M. Heckman, Editor(s)

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