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Proceedings Paper

Towards a THz backward wave amplifier in European OPTHER project
Author(s): M. Dispenza; F. Brunetti; C.-S. Cojocaru; A. de Rossi; A. Di Carlo; D. Dolfi; A. Durand; A. M. Fiorello; A. Gohier; P. Guiset; M. Kotiranta; V. Krozer; P. Legagneux; R. Marchesin; S. Megtert; F. Bouamrane; M. Mineo; C. Paoloni; K. Pham; J. P. Schnell; A. Secchi; E. Tamburri; M. L. Terranova; G. Ulisse; V. Zhurbenko
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Paper Abstract

Within the EC funded international project OPTHER (OPtically Driven TeraHertz AmplifiERs) a considerable technological effort is being undertaken, in terms of technological development, THz device design and integration. The ultimate goal is to develop a miniaturised THz amplifier based on vacuum-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met with a proper device configuration and careful optimization of the different parts of the amplifier. Two parallel schemes will be employed for amplifier realisation: THz Drive Signal Amplifier and Optically Modulated Beam THz Amplifier.

Paper Details

Date Published: 12 October 2010
PDF: 7 pages
Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783706 (12 October 2010); doi: 10.1117/12.864986
Show Author Affiliations
M. Dispenza, SELEX Sistemi Integrati S.p.A. (Italy)
F. Brunetti, Univ. degli Studi di Roma Tor Vergata (Italy)
C.-S. Cojocaru, LPICM, CNRS, Ecole Polytechnique (France)
A. de Rossi, Thales Research & Technology (France)
A. Di Carlo, Univ. degli Studi di Roma Tor Vergata (Italy)
D. Dolfi, Thales Research & Technology (France)
A. Durand, Thales Electron Devices S.A. (France)
A. M. Fiorello, SELEX Sistemi Integrati S.p.A. (Italy)
A. Gohier, LPICM, CNRS, Ecole Polytechnique (France)
P. Guiset, Thales Research & Technology (France)
M. Kotiranta, Univ. Frankfurt (Germany)
V. Krozer, Univ. Frankfurt (Germany)
P. Legagneux, Thales Research & Technology (France)
R. Marchesin, Thales Electron Devices S.A. (France)
S. Megtert, Unité Mixte de Physique, CNRS/Thales (France)
F. Bouamrane, Unité Mixte de Physique, CNRS/Thales (France)
M. Mineo, Univ. degli Studi di Roma Tor Vergata (Italy)
C. Paoloni, Univ. degli Studi di Roma Tor Vergata (Italy)
K. Pham, Thales Electron Devices S.A. (Italy)
J. P. Schnell, Thales Research & Technology (France)
A. Secchi, SELEX Sistemi Integrati S.p.A. (Italy)
E. Tamburri, Univ. degli Studi di Roma Tor Vergata (Italy)
M. L. Terranova, Univ. degli Studi di Roma Tor Vergata (Italy)
G. Ulisse, Univ. degli Studi di Roma Tor Vergata (Italy)
V. Zhurbenko, Technical Univ. of Denmark (Denmark)


Published in SPIE Proceedings Vol. 7837:
Millimetre Wave and Terahertz Sensors and Technology III
Keith A. Krapels; Neil A. Salmon, Editor(s)

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