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Proceedings Paper

THz imaging with low-cost 130 nm CMOS transistors
Author(s): Franz Schuster; Maciej Sakowicz; Alexandre Siligaris; Laurent Dussopt; Hadley Videlier; Dominique Coquillat; Frédéric Teppe; Benoît Giffard; Adrien Dobroiu; Thomas Skotnicki; Wojciech Knap
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Paper Abstract

We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology. Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At 1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz0.5.

Paper Details

Date Published: 20 October 2010
PDF: 7 pages
Proc. SPIE 7837, Millimetre Wave and Terahertz Sensors and Technology III, 783704 (20 October 2010); doi: 10.1117/12.864877
Show Author Affiliations
Franz Schuster, Commissariat à l'Énergie Atomique (France)
URM 5650, CNRS, Univ. Montpellier 2 (France)
Maciej Sakowicz, URM 5650, CNRS, Univ. Montpellier 2 (France)
Alexandre Siligaris, Commissariat à l'Énergie Atomique (France)
Laurent Dussopt, Commissariat à l'Énergie Atomique (France)
Hadley Videlier, URM 5650, CNRS, Univ. Montpellier 2 (France)
Dominique Coquillat, URM 5650, CNRS, Univ. Montpellier 2 (France)
Frédéric Teppe, URM 5650, CNRS, Univ. Montpellier 2 (France)
Benoît Giffard, Commissariat à l'Énergie Atomique (France)
Adrien Dobroiu, RIKEN (Japan)
Thomas Skotnicki, STMicroelectronics (France)
Wojciech Knap, URM 5650, CNRS, Univ. Montpellier 2 (France)


Published in SPIE Proceedings Vol. 7837:
Millimetre Wave and Terahertz Sensors and Technology III
Keith A. Krapels; Neil A. Salmon, Editor(s)

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