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Proceedings Paper

Advanced laser mask repair in the current wafer foundry environment
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Paper Abstract

Contrary to the prior assumptions of its technical demise, deep UV (DUV) femtosecond pulsed laser repair of photomasks is continuing to mature and improve as a technology. Similar to the optical enhancements that allow for 193 nm wavelength light to continue being used down to the 32, or even in some cases 22 nm, node, the process regimes for this type of laser repair continue to expand as new processes are discovered. This work reviews the qualification of repair performance for production at a major wafer foundry site. In addition advances are shown in the area of through-pellicle repair (TRP) process development. These advances include the preferential (versus surrounding reference mask structures) removal of soft defects and the capability to remove or manipulate particles on top of a flat absorber region with no detectable removal of the absorber. These developments will further demonstrate the progressive decoupling of the laser repair spot size from the minimum technology node for laser repair.

Paper Details

Date Published: 24 September 2010
PDF: 11 pages
Proc. SPIE 7823, Photomask Technology 2010, 782320 (24 September 2010); doi: 10.1117/12.864426
Show Author Affiliations
Tod Robinson, RAVE LLC (United States)
Daniel Yi, RAVE LLC (United States)
Jeff LeClaire, RAVE LLC (United States)
Roy White, RAVE LLC (United States)
Ron Bozak, RAVE LLC (United States)
Mike Archuletta, RAVE LLC (United States)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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