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Proceedings Paper

EUV mask defectivity study by existing DUV tools and new e-beam technology
Author(s): Shmoolik Mangan; Rik Jonckheere; Dieter Van Den Heuvel; Moshe Rozentsvige; Vladislav Kudriashov; Ran Brikman; Lior Shoval; Gaetano Santoro; Ilan Englard
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Paper Abstract

While EUV lithography is approaching the pre-production stage, improving mask defectivity is recognized as a top challenge. The accepted strategy for EUV reticle qualification is to use a combination of a dedicated blank inspection (BI) to visualize EUV-specific multi-layer (ML) defects and patterned-mask inspection (PMI) that must be capable to meet the resolution requirements of the pattern. Actinic inspection is considered the strongest option for the blank inspection because of the limitation of optical light to visualize the nm-high distortions within the ML. Earlier publications showed that wafer inspection (WI) can potentially reveal such mask defects, This is, however, too late within the process. In addition, existing PMI and wafer inspection approaches exhibit limitations in detection capability and gaps are observed between detection of printed defects and defects detected on the mask (and the blank). We compare existing inspection solutions for detection of EUV mask defects (193nm based mask inspection and repeater analysis in a DUV wafer inspection) and present a feasibility study for use of a fast e-beam technology for mask inspection. Finally, we discuss the prospects of existing DUV tools and future e-beam technology to support EUV reticle inspection for current and future nodes.

Paper Details

Date Published: 29 November 2010
PDF: 11 pages
Proc. SPIE 7823, Photomask Technology 2010, 78232A (29 November 2010); doi: 10.1117/12.864351
Show Author Affiliations
Shmoolik Mangan, Applied Materials (Israel)
Rik Jonckheere, IMEC (Belgium)
Dieter Van Den Heuvel, IMEC (Belgium)
Moshe Rozentsvige, Applied Materials (Israel)
Vladislav Kudriashov, Applied Materials (Israel)
Ran Brikman, Applied Materials (Israel)
Lior Shoval, Applied Materials (Israel)
Gaetano Santoro, Applied Materials (Belgium)
Ilan Englard, Applied Materials (Netherlands)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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