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Proceedings Paper

SMO mask requirements for low k1 lithography
Author(s): Seiji Nagahara; Kazuyoshi Kawahara; Hiroshi Yamazaki; Akihiko Ando; Masayuki Naganuma; Kazuyuki Yoshimochi; Takayuki Uchiyama; Ken Nakashima; Hidemichi Imai; Katsuya Hayano; Hidekazu Migita; Eiji Tsujimoto
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Paper Abstract

This paper tries to clarify the requirements for Source-Mask co-Optimization (SMO) type complex masks for low k1 technology nodes using a dedicated test mask. The current status of mask CD requirements and inspection capability for Free Form (FF) SRAFs which give wider process window are discussed by comparing with Rectangular Shape (RS) SRAFs. From CD deviation analysis with CD bias change at both main and SRAF patterns, the importance of CD control at entire SRAF is emphasized although the partial lack of SRAF seems to give less impact on the main pattern lithography performance. It is also suggested that SRAF printability of FF-SRAF needs to be carefully controlled with mask bias error consideration. To identify the defects which give impact on litho performance, simulation-based defect printability prediction (M-LMC) using inspection images is evaluated and found to be an important enabler for complex mask inspection. The simulation-image based defect analysis helps to reduce the nuisance defects, and greatly saves analysis time of measurement on Aerial Image Measurement System (AIMSTM). To introduce the complex free form mask into production, mask-writing shot-count reduction is also evaluated. It is shown that fragmentation using Model- Based (MB) Mask Data Preparation (MDP) effectively reduces the mask writing shot counts with using overlapping of the patterns.

Paper Details

Date Published: 29 September 2010
PDF: 12 pages
Proc. SPIE 7823, Photomask Technology 2010, 782310 (29 September 2010); doi: 10.1117/12.864317
Show Author Affiliations
Seiji Nagahara, Renesas Electronics Corp. (Japan)
Kazuyoshi Kawahara, Renesas Electronics Corp. (Japan)
Hiroshi Yamazaki, Renesas Electronics Corp. (Japan)
Akihiko Ando, Renesas Electronics Corp. (Japan)
Masayuki Naganuma, Renesas Electronics Corp. (Japan)
Kazuyuki Yoshimochi, Renesas Electronics Corp. (Japan)
Takayuki Uchiyama, Renesas Electronics Corp. (Japan)
Ken Nakashima, Renesas Electronics Corp. (Japan)
Hidemichi Imai, Dai Nippon Printing Co., Ltd. (Japan)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Hidekazu Migita, Dai Nippon Printing Co., Ltd. (Japan)
Eiji Tsujimoto, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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