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Proceedings Paper

Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool
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Paper Abstract

The key challenge before EUVL is to make defect-free masks hence it is important to identify the root cause of defects, and it is also necessary to establish suitable critical mask defect size for the production of ULSI devices. Selete has been developing EUV mask infrastructures such as a full-field actinic blank inspection tool and 199nm wavelength patterned mask inspection tool in order to support blank/mask supplier in reducing blank/mask defects which impact on wafer printing. In this paper, we evaluate the printability of multilayer defects and of absorber defects exposed by a full-field scanner EUV1, using full-field actinic/non-actinic blank inspection tool and 199nm wavelength patterned mask inspection tool. And based on the results of native defect analysis of blank/mask, we ascertain that blank inspection with actinic is necessary for mask fabrication in order to reduce the risk of missing phase defects, which hardly can be detected by patterned mask inspection tool.

Paper Details

Date Published: 29 September 2010
PDF: 10 pages
Proc. SPIE 7823, Photomask Technology 2010, 78231U (29 September 2010); doi: 10.1117/12.864305
Show Author Affiliations
Takashi Kamo, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Takeshi Yamane, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Shigemura, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Noriaki Takagi, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuyoshi Amano, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuo Tawarayama, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Ichiro Mori, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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