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Proceedings Paper

Improvement of actinic blank inspection and phase defect analysis
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Paper Abstract

We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. A new CCD camera was installed onto the system with an objective of throughput and inspection sensitivity improvement. As the result, the throughput was improved from 14.25 to 4.75 hours per plate, and the detection probability for 1.2 nmhigh 40 nm-wide defect was found to be 95.7 %. This means that the system has a potential of its extendibility to beyond 22 nm HP inspection.

Paper Details

Date Published: 29 September 2010
PDF: 8 pages
Proc. SPIE 7823, Photomask Technology 2010, 78231V (29 September 2010); doi: 10.1117/12.864290
Show Author Affiliations
Takeshi Yamane, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshihiko Tanaka, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Tsuneo Terasawa, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, MIRAI-Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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