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Proceedings Paper

Degradation of pattern quality due to strong electron scattering in EUV mask
Author(s): Jin Choi; Rae Won Lee; Sang Hee Lee; Byung Sup Ahn; Hee Bom Kim; Sang-Gyun Woo; Han Ku Cho
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Paper Abstract

The ray tracing of electron based on Monte Carlo is simulated by GEANT software to investigate the electron scattering property in ArF photomask and EUV photomask. By Monte Carlo simulation, we have presented the mechanism of electron scattering in EUV photomask and simulated the electron distribution which gives rise to change the patterning performance of EUV photomask, compared with those of ArF photomask. Furthermore, the overlay error of EUV photomask has been analyzed by the charging model. EUV photomask has the additional electron distribution in the range of 2um, which comes from the strong electron scattering at Mo/Si multilayer. Because of this additional electron distribution, EUV photomask has the pattern size error due to proximity effect of electron when the conventional Gaussian function is used to correct the proximity effect of ArF photomask. The maximum residual error due to the proximity effect in EUV photomask is 7nm. Furthermore, we have confirmed that the linearity of pattern size is so different from ArF photomask and it is well explained with the Gaussian blur model based on the electron distribution of EUV photomask.

Paper Details

Date Published: 24 September 2010
PDF: 13 pages
Proc. SPIE 7823, Photomask Technology 2010, 78230D (24 September 2010); doi: 10.1117/12.864212
Show Author Affiliations
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Rae Won Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang Hee Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byung Sup Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hee Bom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang-Gyun Woo, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Han Ku Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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