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Proceedings Paper

Impact of model-based fracturing on e-beam proximity effect correction methodology
Author(s): Christophe Pierrat; Ingo Bork
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Paper Abstract

The current e-beam proximity effect correction equations are reviewed in the context of model-based fracturing where shots can overlap and the dose of each shot can be set individually. A new set of equations is proposed and verified. The formulation is shown to lift some restrictions imposed by the older formulation such as the minimum shot size dimension and the type of model used to describe forward scattering effects. The new model does not require the function to be Gaussian or the operation with the dose map to be a convolution. We also demonstrate that using current mask writing equipment, the correction of overlapping shots can be performed accurately if the correction of each shot is performed taking into account all the shots. Verification is done using two different approaches. The first solution consists of using directly the modified proximity effect equations to calculate the dose for each shot. The second solution makes the correction a part of the model-based fracturing process. The results obtained for both approaches are identical showing that the theory and the implementations are correct.

Paper Details

Date Published: 29 September 2010
PDF: 11 pages
Proc. SPIE 7823, Photomask Technology 2010, 782313 (29 September 2010); doi: 10.1117/12.864126
Show Author Affiliations
Christophe Pierrat, IC Images Technologies, Inc. (United States)
Ingo Bork, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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