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Proceedings Paper

Well organized Si nanowires arrays synthesis for electronic devices
Author(s): E. Lefeuvre; K.H. Kim; Z. B. He; J. L. Maurice; M. Chatelet; D. Pribat; B. S. Kim; C. S. Cojocaru
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Paper Abstract

In this paper we demonstrate the efficiency of porous anodic alumina (PAA) to confine the growth of silicon nanowires (SiNWs). High-density arrays of parallel, straight and organized SiNWs have been realized, by Hot Wire Chemical Vapor Deposition (HW-CVD) growth process inside PAA templates with electrodeposited copper as catalyst. The PAA was made by the anodization of an aluminium layer, followed by the catalysts electrodeposition at the bottom of the pores. Subsequently, SiNWs were grown in a modified HW-CVD reactor with SiH4 as the precursor gas. The morphology and the structure of the wires have been investigated by SEM and TEM, and their collective electrical behavior has been characterized with a 2-probes device.

Paper Details

Date Published: 25 August 2010
PDF: 6 pages
Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 776105 (25 August 2010); doi: 10.1117/12.863923
Show Author Affiliations
E. Lefeuvre, LPICM - Ecole Polytechnique (France)
K.H. Kim, LPICM - Ecole Polytechnique (France)
Z. B. He, LPICM - Ecole Polytechnique (France)
J. L. Maurice, LPICM - Ecole Polytechnique (France)
M. Chatelet, LPICM - Ecole Polytechnique (France)
D. Pribat, LPICM - Ecole Polytechnique (France)
Sungkyunkwan Univ. (Korea, Republic of)
B. S. Kim, Samsung Electronics (Korea, Republic of)
C. S. Cojocaru, LPICM - Ecole Polytechnique (France)


Published in SPIE Proceedings Vol. 7761:
Carbon Nanotubes, Graphene, and Associated Devices III
Didier Pribat; Young-Hee Lee; Manijeh Razeghi, Editor(s)

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