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Proceedings Paper

Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates
Author(s): Erdem Cicek; Zahra Vashaei; Can Bayram; Ryan McClintock; Manijeh Razeghi; Melville P. Ulmer
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Paper Abstract

There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

Paper Details

Date Published: 18 August 2010
PDF: 11 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77801P (18 August 2010); doi: 10.1117/12.863905
Show Author Affiliations
Erdem Cicek, Northwestern Univ. (United States)
Zahra Vashaei, Northwestern Univ. (United States)
Can Bayram, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Melville P. Ulmer, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; John P. Hartke; Paul D. LeVan; Randolph E. Longshore; Ashok K. Sood; Manijeh Razeghi, Editor(s)

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