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Proceedings Paper

Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes
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Paper Abstract

We present a finite integration technique (FIT) simulator for modelling light diffraction from lithographic masks with complex shapes. This method has high flexibility in geometrical modelling and treating curved boundaries. The inherent feature of FIT allows more accurate rigorous electromagnetic field simulation in complex structures. This technique is also suited for fast EMF simulations and large 3D problems because of its parallelisation potential. We applied this method to investigate the effect of various mask shapes on lithographically printed images. The imaging results were obtained using Dr.LiTHO's imaging simulator. We demonstrate results for attenuated phase-shift mask (PSM) with different absorber deviations from ideal shapes such as footing and oblique sidewalls.

Paper Details

Date Published: 15 May 2010
PDF: 10 pages
Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450C (15 May 2010); doi: 10.1117/12.863595
Show Author Affiliations
Z. Rahimi, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
A. Erdmann, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Erlangen Graduate School in Advanced Optical Technologies (Germany)
P. Evanschitzky, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
C. Pflaum, Friedrich-Alexander-Univ. Erlangen-Nürnberg (Germany)
Erlangen Graduate School in Advanced Optical Technologies (Germany)


Published in SPIE Proceedings Vol. 7545:
26th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

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