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Proceedings Paper

Radiation detectors based on 4H semi-insulating silicon carbide
Author(s): Krishna C. Mandal; Ramesh Krishna; Peter G. Muzykov; Zegilor Laney; Sandip Das; Tangali S. Sudarshan
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Paper Abstract

In this work, radiation detectors were fabricated using 8 mm × 8 mm substrates, ~ 390 μm in thickness, diced from commercial (0001) 4H-SiC semi-insulating wafer (> 109 Ohm-cm). Our characterization results, including x-ray diffraction (XRD), electron beam induced current (EBIC), chemical etching, cross-polarized imaging, thermally stimulated current (TSC) measurements, chemical etching and Raman spectroscopy, show the high quality of the semiinsulating SiC crystals, which are believed to meet the requirements of fabricating high performance radiation detectors. Current-voltage characteristics showed very low leakage current (~ 1.5 pA at -500 V) and the capability of detector's operation up to 200°C.

Paper Details

Date Published: 1 September 2010
PDF: 8 pages
Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050U (1 September 2010); doi: 10.1117/12.863572
Show Author Affiliations
Krishna C. Mandal, Univ. of South Carolina (United States)
Ramesh Krishna, Univ. of South Carolina (United States)
Peter G. Muzykov, Univ. of South Carolina (United States)
Zegilor Laney, Univ. of South Carolina (United States)
Sandip Das, Univ. of South Carolina (United States)
Tangali S. Sudarshan, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 7805:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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