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Proceedings Paper

Characterization of gallium telluride crystals grown from graphite crucible
Author(s): Krishna C. Mandal; Timothy Hayes; Peter G. Muzykov; Ramesh Krishna; Sandip Das; Tangali S. Sudarshan; Shuguo Ma
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Paper Abstract

In this work we investigated a new method of growing detector grade large GaTe layered chalcogenide single crystals. GaTe ingots (2" in diameter and about 10 cm in length) were grown by a novel method using graphite crucible by slow crystallization from melt of high purity (7N) Ga and Te precursors in argon atmosphere. GaTe samples from the monocrystalline area of the ingot have been cleaved mechanically and characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis by x-rays (EDAX), atomic force microscopy (AFM), xray photoelectron spectroscopy (XPS), transmission line matrix method (TLM), resistivity measurements using van der Pauw technique, Hall Effect and Capacitance-Voltage measurements. Our investigations reveal high potential for developing superior quality GaTe crystals using this growth technique for growing large volume inexpensive GaTe single crystals for nuclear radiation detectors.

Paper Details

Date Published: 1 September 2010
PDF: 10 pages
Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78050Q (1 September 2010); doi: 10.1117/12.863570
Show Author Affiliations
Krishna C. Mandal, Univ. of South Carolina (United States)
Timothy Hayes, Univ. of South Carolina (United States)
Peter G. Muzykov, Univ. of South Carolina (United States)
Ramesh Krishna, Univ. of South Carolina (United States)
Sandip Das, Univ. of South Carolina (United States)
Tangali S. Sudarshan, Univ. of South Carolina (United States)
Shuguo Ma, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 7805:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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