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Proceedings Paper

e-beam induced EUV photomask repair: a perfect match
Author(s): M. Waiblinger; K. Kornilov; T. Hofmann; K. Edinger
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Paper Abstract

Due to the updated ITRS roadmap EUV might enter the market as a productive solution for the 32 nm node1. Since the EUV-photomask is used as mirror and no longer as transitive device the severity of different defect types has changed significantly. Furthermore the EUV-photomask material stack is much more complex than the conventional 193nm photomask materials which expand the field of critical defect types even further. In this paper we will show, that "classical" 193 mask repair processes cannot be applied to EUV material. We will show the performance of a new repair process based on the novel ebeam repair tool MeRiT® HR 32. Furthermore this process will be applied on real EUV mask defects and the success of these repairs confirmed by wafer prints.

Paper Details

Date Published: 15 May 2010
PDF: 8 pages
Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450P (15 May 2010); doi: 10.1117/12.863542
Show Author Affiliations
M. Waiblinger, Carl Zeiss SMS GmbH (Germany)
K. Kornilov, Carl Zeiss SMS NaWoTec GmbH (Germany)
T. Hofmann, Carl Zeiss SMS NaWoTec GmbH (Germany)
K. Edinger, Carl Zeiss SMS NaWoTec GmbH (Germany)

Published in SPIE Proceedings Vol. 7545:
26th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

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