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Proceedings Paper

InGaP/GaAs/InGaAs triple junction concentrators using bi-facial epigrowth
Author(s): Philip Chiu; Steven Wojtczuk; Xuebing Zhang; Daniel Derkacs; Chris Harris; Daryl Pulver; Mike Timmons
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Paper Abstract

Spire Semiconductor has demonstrated a new bi-facial epigrowth manufacturing process for InGaP/GaAs/InGaAs N/P tandem concentrator cells. NREL has verified 5.5 mm cells as 41.4% at 334 suns, AM1.5D, 25°C, matching within measurement error the world record efficiency. A lattice-mismatched 0.94 eV InGaAs cell is epitaxially grown on the backside of a lightly doped, N-type GaAs wafer, the epiwafer is flipped, and 1.42 eV GaAs and 1.89 eV InGaP cells are grown lattice matched on the opposite wafer surface. Cells are then made using only standard III-V process steps. The bi-facial process is an alternative to the inverted metamorphic (IMM) process. It does not use epitaxial liftoff and wafer bonding as in the IMM approach, but does require breaking the growth into two parts and flipping the epiwafer, which we believe is an easier task.

Paper Details

Date Published: 24 August 2010
PDF: 8 pages
Proc. SPIE 7769, High and Low Concentrator Systems for Solar Electric Applications V, 776909 (24 August 2010); doi: 10.1117/12.862914
Show Author Affiliations
Philip Chiu, Spire Semiconductor, LLC (United States)
Steven Wojtczuk, Spire Semiconductor, LLC (United States)
Xuebing Zhang, Spire Semiconductor, LLC (United States)
Daniel Derkacs, Spire Semiconductor, LLC (United States)
Chris Harris, Spire Semiconductor, LLC (United States)
Daryl Pulver, Spire Semiconductor, LLC (United States)
Mike Timmons, Independent Consultant (United States)


Published in SPIE Proceedings Vol. 7769:
High and Low Concentrator Systems for Solar Electric Applications V
Lori E. Greene; Raed A. Sherif, Editor(s)

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