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Proceedings Paper

Structural environment of nitrogen in n-doped rutile TiO[sub]2[/sub](110)
Author(s): M. A. Henderson; V. Shutthanandan; T. Ohsawa; S. A. Chambers
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Paper Abstract

We employ x-ray photoelectron spectroscopy (XPS), reflection high-energy electron diffraction (RHEED) and nuclear reaction analysis (NRA) to characterize the concentration-dependent structural properties of nitrogen doping into rutile TiO2. High quality N-doped TiO2 were prepared on rutile single crystal TiO2(110) substrates using plasma-assisted molecular beam epitaxy with an electron cyclotron resonance (ECR) plasma and Ti effusive sources. Films with N dopant concentrations at or below 2 at.% exhibited predominately substitutional doping based on NRA data, whereas films with concentrations above this limit resulted in little or no substitutional N and surfaces rich in Ti3+ . The binding energy of the N 1s feature in XPS did not readily distinguish between these two extremes in N-doping, rendering features within 0.4 eV of each other and similar peak profiles. Although widely used to characterize the state of N in anion-doped TiO2 materials, we find that XPS is unsuitable for this task.

Paper Details

Date Published: 24 August 2010
PDF: 9 pages
Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 777007 (24 August 2010); doi: 10.1117/12.862297
Show Author Affiliations
M. A. Henderson, Pacific Northwest National Lab. (United States)
V. Shutthanandan, Pacific Northwest National Lab. (United States)
T. Ohsawa, Pacific Northwest National Lab. (United States)
S. A. Chambers, Pacific Northwest National Lab. (United States)


Published in SPIE Proceedings Vol. 7770:
Solar Hydrogen and Nanotechnology V
Hicham Idriss; Heli Wang, Editor(s)

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